Growth of germanium quantum dots on oxidized silicon surface
Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of the nucleation and growth of three-dimensional islands by the Volmer-Weber mechanism in this system is proposed. The dependences of the average size and surface density of quantum dots on the...
| Published in: | Russian physics journal Vol. 63, № 2. P. 296-302 |
|---|---|
| Other Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794756 Перейти в каталог НБ ТГУ |