Molecular dynamics simulations of the growth of Ge on Si

The initial stages of the growth of germanium on the dimer reconstructed Si(100) surface is modelled using molecular dynamics (MD). Pyramidal island structures are observed to form despite MD being carried out at a deposition rate faster than experiment. By an examination of transitions that can oc...

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Bibliographic Details

Published in:	Surface science Vol. 696. P. 121594 (1-9)
Other Authors:	Lloyd, Adam, Smith, Roger, Lozovoy, Kirill A., Voytsekhovskiy, Alexander V., Kokhanenko, Andrey P., Zhoua, Ying
Format:	Article
Language:	English
Subjects:	квантовые точки молекулярная динамика статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000795313 Перейти в каталог НБ ТГУ