Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells

Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were investigated. SQW significantly influences the voltage, frequency, and temperature dependencies of the admittance of the MIS structure. When the SQW thickness is less than the critical...

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Bibliographic Details

Published in:	Applied nanoscience Vol. 10, № 8. P. 2489-2494
Other Authors:	Syvorotka, I. I., Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Izhnin, Igor I.
Format:	Article
Language:	English
Subjects:	одиночные квантовые ямы молекулярно-лучевая эпитаксия адмиттанс МДП-структуры структура металл - диэлектрик - полупроводник статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794304 Перейти в каталог НБ ТГУ