High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system

In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski-Krastanov mechanism in elastically stressed systems by the reflection high-energy electron diffraction method. Detailed dependences of the periodi...

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Bibliographic Details

Published in:	Nanotechnology Vol. 33, № 11. P. 115603 (1-8)
Other Authors:	Dirko, Vladimir V., Lozovoy, Kirill A., Kokhanenko, Andrey P., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	сверхструктурные переходы Странского-Крастанова механизм роста квантовые точки молекулярно-лучевая эпитаксия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000926716 Перейти в каталог НБ ТГУ