Nano‑scale structural studies of defects in arsenic‑implanted n and p‑type HgCdTe films

Bright-feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm-2 fuence in n and p-type Hg0.78Cd0.22Te flms grown by molecular-beam epitaxy. A similarity in defect pattern...

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Bibliographic Details

Published in:	Applied nanoscience Vol. 12, № 3. P. 395-401
Other Authors:	Izhnin, Igor I., Voytsekhovskiy, Alexander V., Korotaev, Alexander G., Mynbaev, Karim D., Świątek, Zbigniew, Morgiel, Jerzy, Fitsych, Olena I., Varavin, Vasilii S., Marin, Denis V., Yakushev, Maxim V., Bonchyk, A. Yu, Savytskyy, Hrygory V.
Format:	Article
Language:	English
Subjects:	имплантация мышьяка просвечивающая электронная микроскопия эпитаксиальные пленки дефекты статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000927183 Перейти в каталог НБ ТГУ