Experimental study of NBνN barrier structures based on MBE n-HgCdTe for MWIR and LWIR photodetectors

The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different types of photosensitive structures for MWIR and LWIR infrared ranges, grown by molecular beam epitaxy...

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Bibliographic Details

Published in:	Journal of communications technology and electronics Vol. 68, № 3. P. 334-337
Other Authors:	Voytsekhovskiy, Alexander V., Dzyadukh, Stanislav M., Gorn, Dmitriy Igorevich, Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V.
Format:	Article
Language:	English
Subjects:	вольт-амперная характеристика адмиттанс импеданс молекулярно-лучевая эпитаксия барьерная структура статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016871