Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator

Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator

The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulating coating has been experimentally studied. It has been shown that the structures with a grade...

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Bibliographic Details
Published in:	Journal of communications technology and electronics Vol. 63, № 3. P. 281-284
Other Authors:	Voytsekhovskiy, Alexander V., Dzyadukh, Stanislav M., Vasilev, Vladimir V., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy Yu, Nesmelov, Sergey N.
Format:	Article
Language:	English
Subjects:	адмиттанс МДП-структуры оксид алюминия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000626219 Перейти в каталог НБ ТГУ

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