Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching

Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching (IE) are presented. The stability was studied during the storage of ion-etched samples at the room temperature with periodical measurements of carrier...

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Bibliographic Details

Published in:	Infrared physics and technology Vol. 73. P. 158-165
Other Authors:	Izhnin, Igor I., Voytsekhovskiy, Alexander V., Korotaev, Alexander G., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Bonchyk, A. Yu, Savytskyy, Hrygory V., Mynbaev, Karim D., Fitsych, Olena I.
Format:	Article
Language:	English
Subjects:	теллурид кадмия-ртути ионное травление молекулярно-лучевая эпитаксия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000547568 Перейти в каталог НБ ТГУ