Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching
Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching (IE) are presented. The stability was studied during the storage of ion-etched samples at the room temperature with periodical measurements of carrier...
| Published in: | Infrared physics and technology Vol. 73. P. 158-165 |
|---|---|
| Other Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000547568 Перейти в каталог НБ ТГУ |
| LEADER | 03149nab a2200421 c 4500 | ||
|---|---|---|---|
| 001 | vtls000547568 | ||
| 003 | RU-ToGU | ||
| 005 | 20230319225720.0 | ||
| 007 | cr | | ||
| 008 | 181202|2015 enk s a eng dd | ||
| 024 | 7 | |a 10.1016/j.infrared.2015.09.019 |2 doi | |
| 035 | |a to000547568 | ||
| 039 | 9 | |a 202102111521 |c 201812021546 |d staff |c 201609280729 |d cat202 |c 201609231344 |d VLOAD |y 201609231335 |z Александр Эльверович Гилязов | |
| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching |c I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et.al.] |
| 504 | |a Библиогр.: 26 назв. | ||
| 520 | 3 | |a Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching (IE) are presented. The stability was studied during the storage of ion-etched samples at the room temperature with periodical measurements of carrier concentration and mobility with the use of the Hall effect. It is shown that after ∼103 min after IE electron concentration in un-doped HgCdTe films grown by molecular-beam epitaxy (MBE) on GaAs substrates stabilizes at ∼1015 cm−3 and does not change in 7 years of storage of the films. In contrast to that, in films grown by liquid phase epitaxy and by MBE on Si substrates, electron concentration continues to decrease during all the period of storage and gets lower than 1014 cm−3. For such films, donor doping of the material is recommended, which for indium doping with concentration from 1015 to 1016 cm−3 is shown to be able to keep stable electron concentration for all the studied period of time. In bulk HgCdTe crystal doped with silver, fast re-conversion of the n-region of a p-n junction fabricated with IE back to p-type was observed. The results obtained show some limitations of IE in relation to fabrication of p-n junctions for HgCdTe-based photodetectors, and suggest how these limitations can be avoided. | |
| 653 | |a теллурид кадмия-ртути | ||
| 653 | |a ионное травление | ||
| 653 | |a молекулярно-лучевая эпитаксия | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Izhnin, Igor I. |9 102905 | |
| 700 | 1 | |a Voytsekhovskiy, Alexander V. |9 91706 | |
| 700 | 1 | |a Korotaev, Alexander G. |9 106335 | |
| 700 | 1 | |a Varavin, Vasilii S. |9 102908 | |
| 700 | 1 | |a Dvoretsky, Sergei A. |9 101527 | |
| 700 | 1 | |a Mikhailov, Nikolay N. |9 103757 | |
| 700 | 1 | |a Yakushev, Maxim V. |9 102909 | |
| 700 | 1 | |a Bonchyk, A. Yu. |9 100966 | |
| 700 | 1 | |a Savytskyy, Hrygory V. |9 102907 | |
| 700 | 1 | |a Mynbaev, Karim D. |9 111823 | |
| 700 | 1 | |a Fitsych, Olena I. |9 102906 | |
| 773 | 0 | |t Infrared physics and technology |d 2015 |g Vol. 73. P. 158-165 |x 1350-4495 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 7 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000547568 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=515221 | ||
| 908 | |a статья | ||
| 999 | |c 515221 |d 515221 | ||