Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te
Carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The implantation was performed with ion energy 190 or 350 keV and ion fluence ranging from 1012 to 1015 cm2....
| Published in: | Infrared physics and technology Vol. 114. P. 103665 (1-7) |
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| Other Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901902 Перейти в каталог НБ ТГУ |
| Summary: | Carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The implantation was performed with ion energy 190 or 350 keV and ion fluence ranging from 1012 to 1015 cm2. A substantial difference between carrier species in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films subjected to arsenic implantation and post- implantation activation annealing was established. In particular, arsenic implantation in p-type Hg0.7Cd0.3Te in most cases lead to the formation of n+-p- (not n+-n-p-) structures, and in n-type Hg0.7Cd0.3Te films post- implantation activation annealing lead to modification of the electrical parameters of the n-type 'base', in contrast to Hg0.8Cd0.2Te material studied earlier. The difference in carrier species formed in arsenic-implanted Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was tentatively explained by different background impurity concentrations in the films with different chemical composition. |
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| Bibliography: | Библиогр.: 18 назв. |
| ISSN: | 1350-4495 |