Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te
Carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The implantation was performed with ion energy 190 or 350 keV and ion fluence ranging from 1012 to 1015 cm2....
| Published in: | Infrared physics and technology Vol. 114. P. 103665 (1-7) |
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| Other Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901902 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.1016/j.infrared.2021.103665 |2 doi | |
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| 245 | 1 | 0 | |a Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te |c I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et al.] |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 18 назв. | ||
| 520 | 3 | |a Carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The implantation was performed with ion energy 190 or 350 keV and ion fluence ranging from 1012 to 1015 cm2. A substantial difference between carrier species in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films subjected to arsenic implantation and post- implantation activation annealing was established. In particular, arsenic implantation in p-type Hg0.7Cd0.3Te in most cases lead to the formation of n+-p- (not n+-n-p-) structures, and in n-type Hg0.7Cd0.3Te films post- implantation activation annealing lead to modification of the electrical parameters of the n-type 'base', in contrast to Hg0.8Cd0.2Te material studied earlier. The difference in carrier species formed in arsenic-implanted Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was tentatively explained by different background impurity concentrations in the films with different chemical composition. | |
| 653 | |a имплантация мышьяка | ||
| 653 | |a ионная имплантация | ||
| 653 | |a молекулярно-лучевая эпитаксия | ||
| 653 | |a эпитаксиальные пленки | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Izhnin, Igor I. |9 102905 | |
| 700 | 1 | |a Mynbaev, Karim D. |9 111823 | |
| 700 | 1 | |a Voytsekhovskiy, Alexander V. |9 91706 | |
| 700 | 1 | |a Korotaev, Alexander G. |9 106335 | |
| 700 | 1 | |a Varavin, Vasilii S. |9 102908 | |
| 700 | 1 | |a Dvoretsky, Sergei A. |9 101527 | |
| 700 | 1 | |a Mikhailov, Nikolay N. |9 103757 | |
| 700 | 1 | |a Yakushev, Maxim V. |9 102909 | |
| 700 | 1 | |a Fitsych, Olena I. |9 102906 | |
| 700 | 1 | |a Świątek, Zbigniew |9 264267 | |
| 700 | 1 | |a Izhnin, Igor I. |9 102905 | |
| 773 | 0 | |t Infrared physics and technology |d 2021 |g Vol. 114. P. 103665 (1-7) |x 1350-4495 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901902 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=901902 | ||
| 908 | |a статья | ||
| 039 | |z 100 | ||
| 999 | |c 901902 |d 901902 | ||