Accumulation of arsenic implantation‑induced donor defects in Hg0.7Cd0.3Te heteroepitaxial structures

Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measurements and mobility spectrum analysis. The studies allowed for identifying the carriers in the impl...

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Bibliographic Details

Published in:	Journal of electronic materials Vol. 50, № 6. P. 3714-3721
Other Authors:	Izhnin, Igor I., Mynbaev, Karim D., Voytsekhovskiy, Alexander V., Korotaev, Alexander G., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Fitsych, Olena I., Świątek, Zbigniew, Jakiela, Rafal
Format:	Article
Language:	English
Subjects:	имплантация мышьяка донорные дефекты гетероэпитаксиальные структуры статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000901903 Перейти в каталог НБ ТГУ