Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator

Admittance of MIS structures based on n(p)- Hg1-xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe layer during epitaxy results in the almost complete disappearance of the hysteresis of electrophysical c...

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Bibliographic Details

Published in:	Russian physics journal Vol. 60, № 11. P. 1853-1863
Other Authors:	Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Sidorov, Georgiy Yu, Varavin, Vasilii S., Vasilev, Vladimir V., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Dzyadukh, Stanislav M.
Format:	Article
Language:	English
Subjects:	адмиттанс оксид алюминия МДП-структуры молекулярно-лучевая эпитаксия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000635227 Перейти в каталог НБ ТГУ