Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy

The capacitance-voltage (CV) curves of metal-insulator-semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first time in a wide range of frequencies and temperatures. The electron concentration in the near-surface...

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Bibliographic Details

Published in:	Journal of communications technology and electronics Vol. 64, № 3. P. 289-293
Other Authors:	Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	молекулярно-лучевая эпитаксия МДП-структуры градиентные слои статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673793 Перейти в каталог НБ ТГУ