Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy

Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy

The capacitance-voltage (CV) curves of metal-insulator-semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first time in a wide range of frequencies and temperatures. The electron concentration in the near-surface...

Full description

Bibliographic Details
Published in:	Journal of communications technology and electronics Vol. 64, № 3. P. 289-293
Other Authors:	Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	молекулярно-лучевая эпитаксия МДП-структуры градиентные слои статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673793 Перейти в каталог НБ ТГУ

Similar Items

Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy

Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates

Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates

Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
by: Voytsekhovskiy, Alexander V.

An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy

Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3-5 μm spectral range

Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy

Адмиттанс тестовых МДП-приборов на основе nBn-структур из МЛЭ HgCdTe

Емкостные свойства МДП-систем на основе nBn-структуры из МЛЭ HgCdTe

Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators
by: Voytsekhovskiy, Alexander V.

Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal-insulator-semiconductor techniques

Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy

Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers
by: Voytsekhovskiy, Alexander V.

Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy

Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator

Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells
by: Voytsekhovskiy, Alexander V.

Aдмиттанс МДП-структур на основе nBn-систем из эпитаксиального HgCdTe, разработанных для детектирования в спектральном диапазоне 3−5 µm

Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator

Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe
by: Voytsekhovskiy, Alexander V.

Униполярные nBn-структуры и детекторы на основе HgCdTe

Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy
by: Voytsekhovskiy, Alexander V.

Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Admittance of HgCdTe MIS structures with HgTe single quantum well

Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe

Электрофизические характеристики MWIR nBn-структур на основе МЛЭ HgCdTe

Импеданс МДП-приборов на основе nBn-структур из теллурида кадмия – ртути

Электрические характеристики МДП-структур на основе варизонного HgCdTe

Admittance of barrier nanostructures based on MBE HgCdTe

Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator

Влияние подсветки на адмиттансные характеристики МДП-структур на основе nBn со сверхрешеткой в барьерной области

Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells

Характеристики МДП-систем на основе HgCdTe со сверхрешеткой в барьерной области

Электрические характеристики MWIR и LWIR nBn-структур на основе МЛЭ HgCdTe

Диффузионное ограничение темнового тока в nBn-структурах на основе МЛЭ HgCdTe

МДП-структуры на основе варизонного МЛЭ HgCdTe для инфракрасных детекторов