Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various samples. Aluminum oxide (Al2O3) films were used to passivate the surface of the mesa structure. For fab...
| Published in: | Infrared physics and technology Vol. 102. P. 103035 (1-4) |
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| Other Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673798 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.1016/j.infrared.2019.103035 |2 doi | |
| 035 | |a to000673798 | ||
| 039 | 9 | |a 202001271149 |c 202001210917 |d VLOAD |y 202001201528 |z Александр Эльверович Гилязов | |
| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates |c A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh и др. |
| 504 | |a Библиогр.: 24 назв. | ||
| 520 | 3 | |a The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various samples. Aluminum oxide (Al2O3) films were used to passivate the surface of the mesa structure. For fabricated samples, dark current density values were measured at various voltages in a wide temperature range. It is shown that at lower compositions in the barrier layer the dark current is limited by surface leakage. With an increase in the barrier composition, the number of structures with a bulk dark current was increased. The voltage dependences of surface and bulk current density are constructed. The activation energies for structures with the dominance of the bulk dark current are determined. It is shown that for a considerable part of structures with a large barrier composition (x = 0.84) the bulk dark current is determined by diffusion processes. | |
| 653 | |a молекулярно-лучевая эпитаксия | ||
| 653 | |a электрические свойства | ||
| 653 | |a пленки оксида алюминия | ||
| 653 | |a темновой ток | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Nesmelov, Sergey N. |9 101528 | |
| 700 | 1 | |a Dzyadukh, Stanislav M. |9 95711 | |
| 700 | 1 | |a Dvoretsky, Sergei A. |9 101527 | |
| 700 | 1 | |a Mikhailov, Nikolay N. |9 103757 | |
| 700 | 1 | |a Sidorov, Georgiy Yu. |9 478111 | |
| 700 | 1 | |a Yakushev, Maxim V. |9 102909 | |
| 700 | 1 | |a Voytsekhovskiy, Alexander V. |9 91706 | |
| 773 | 0 | |t Infrared physics and technology |d 2019 |g Vol. 102. P. 103035 (1-4) |x 1350-4495 | |
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| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673798 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=462080 | ||
| 908 | |a статья | ||
| 999 | |c 462080 |d 462080 | ||