Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy

The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10-310 K at the frequencies of 0.5-2000 kHz. The content of CdTe in the absorbing layer was 0.36, and the content i...

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Bibliographic Details

Published in:	Materials research express Vol. 6, № 11. P. 116411 (1-7)
Other Authors:	Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	теллурид кадмия-ртути адмиттанс вольт-фарадные характеристики молекулярно-лучевая эпитаксия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000723367 Перейти в каталог НБ ТГУ