Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

The electrical properties of MIS structures based on graded band gap Hg0.77Cd0.23Te grown by the molecular beam epitaxy method with the Al2O3 dielectric formed by the plasma enhanced atomic layer deposition method were investigated. It is established that for such structures the recharge of slow sta...

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Bibliographic Details

Published in:	Vacuum Vol. 158. P. 136-140
Other Authors:	Nesmelov, Sergey N., Dzyadukh, Stanislav M., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy Yu, Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	запрещенная зона инфракрасные детекторы C-V-характеристики МДП-структуры медленные поверхностные состояния статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000788894 Перейти в каталог НБ ТГУ