Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on top of the contact layer of a mid-wave infrared nBn detector based on n-Hg1-xCdxTe grown by molecular beam epitaxy on GaAs (013) substrates. It is shown that when creating a backward electrode on th...

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Bibliographic Details

Published in:	Semiconductor science and technology Vol. 35, № 5. P. 055026 (1-7)
Other Authors:	Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Format:	Article
Language:	English
Subjects:	молекулярно-лучевая эпитаксия барьерный слой МДП-структуры адмиттанс nBn-структура CdHgTe статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000795379 Перейти в каталог НБ ТГУ