Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal-insulator-semiconductor techniques

Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal-insulator-semiconductor techniques

The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A specific feature of MBE n-Hg0.78Cd0.22Te films is the presence of near-surface graded-gap layers with...

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Bibliographic Details
Published in:Journal of electronic materials Vol. 50, № 4. P. 2323-2330
Other Authors: Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V., Marin, Denis V.
Format: Article
Language:English
Subjects:
теллурид кадмия-ртути
молекулярно-лучевая эпитаксия
ионная имплантация
МДП-структуры
адмиттанс
варизонные слои
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893721
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