An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy

Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the absorbing layer was 0.29, and in the barrier layer it was 0.67. It was shown that the dark currents of the created nBn structures are limited by the surfa...

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Bibliographic Details

Published in:	Journal of electronic materials Vol. 50, № 8. P. 4599-4605
Other Authors:	Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V.
Format:	Article
Language:	English
Subjects:	молекулярно-лучевая эпитаксия nBn-структура униполярные барьерные детекторы статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893725 Перейти в каталог НБ ТГУ