Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3-5 μm spectral range

The admittance of test MIS structures based on nBn systems from Hg1 - xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier layer, it is 0.60. An equivalent circuit of an MIS-structure based on an nBn system is proposed and...

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Bibliographic Details

Published in:	Technical physics letters Vol. 47, № 9. P. 629-632
Other Authors:	Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V.
Format:	Article
Language:	English
Subjects:	МДП-структуры nBn-структура адмиттанс статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893726 Перейти в каталог НБ ТГУ