Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers

The admittance of MIS structures based on n(p)-Hg1-xCdxTe (x = 0.21-0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product of the differential resistance of the space charge region and area of the field electrode RSCRA by cr...

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Bibliographic Details

Published in:	Journal of communications technology and electronics Vol. 66, № 3. P. 337-339
Other Authors:	Voytsekhovskiy, Alexander V., Kulchitskii, N. A., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy Yu
Format:	Article
Language:	English
Subjects:	МДП-структуры молекулярно-лучевая эпитаксия дифференциальное сопротивление вариозные слои статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893729 Перейти в каталог НБ ТГУ