Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe

Dark currents in medium-wave nBn structures based on HgCdTe grown with the aid of molecular beam epitaxy on the (013) GaAs substrates are studied. The passivation of the surface of the side walls of the mesastructures is performed using Al2 O3 films formed by plasma atomic layer deposition. It is sh...

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Bibliographic Details

Published in:	Journal of communications technology and electronics Vol. 67, № 3. P. 308-312
Other Authors:	Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu, Yakushev, Maxim V.
Format:	Article
Language:	English
Subjects:	инфракрасные детекторы молекулярно-лучевая эпитаксия темновой ток диффузионное ограничение статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000925757 Перейти в каталог НБ ТГУ